Ke Zou

Monolayer iron germanium telluride Fe₃GeTe₂, one of the typical two-dimensionalferromagnetic materials, hitherto, has only been studied by exfoliated micron-sizedsamples. We achieve high-quality wafer-scale growth of thin Fe₃GeTe₂ films by molecular beam epitaxy, greatly expanding the types of characterizationtools employable and providing the possibility for its integration indevices like consumer electronics. Thickness-dependent transport measurementsare used to characterize and probe for magnetic order. Ferromagneticstates exist in 1-10 layer thick Fe₃GeTe₂, with Curie temperatures rangingfrom 75 K in one layer samples to above 175 K in ten layer samples. Asingle ferromagnetic phase with signifi cant magnetic anisotropy is revealedfor all layer numbers. We present the capability of synthesizing, wafer-scaleFe₃GeTe₂ as an essential step towards its fulfillment in any applicationsinvolving magnetism, such as spintronics.

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